ZnO thin films prepared by ion beam sputtering deposition.
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چکیده
منابع مشابه
Point defects in Sc2O3 thin films by ion beam sputtering.
We show that the concentration of oxygen interstitials trapped in Sc2O3 films by ion beam sputtering from metal targets can be controlled by modifying deposition conditions. We have identified point defects in the form of oxygen interstitials that are present in Sc2O3 films, in significantly high concentrations, i.e., ∼10(18) cm(-3). These results show a correlation between the increase of oxy...
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ژورنال
عنوان ژورنال: SHINKU
سال: 1987
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.30.508